Invention Grant
- Patent Title: Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same
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Application No.: US16019294Application Date: 2018-06-26
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Publication No.: US10608117B2Publication Date: 2020-03-31
- Inventor: HeeSung Lee , SungKi Kim , MinCheol Kim , SeungJin Kim , JeeHo Park , Seoyeon Im
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Seed IP Law Group LLP
- Priority: KR10-2017-0081022 20170627; KR10-2017-0136199 20171020
- Main IPC: H01L29/786
- IPC: H01L29/786 ; G02F1/1335 ; G02F1/1343 ; G02F1/1368 ; H01L27/12 ; H01L27/32 ; H01L29/66 ; G02F1/1333

Abstract:
A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.
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