Invention Grant
- Patent Title: Three-dimensional ferroelectric NOR-type memory
-
Application No.: US16146663Application Date: 2018-09-28
-
Publication No.: US10651182B2Publication Date: 2020-05-12
- Inventor: Daniel H. Morris , Uygar E. Avci , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L27/11514
- IPC: H01L27/11514 ; H01L27/11504 ; H03K19/20 ; G11C5/06 ; G11C11/22 ; H01L29/51
Abstract:
An embodiment includes a three dimensional (3D) memory that includes a NOR logic gate, wherein the NOR logic gate includes a ferroelectric based transistor. Other embodiments are addressed herein.
Information query
IPC分类:
