Invention Grant
- Patent Title: Semiconductor device and a manufacturing method thereof
-
Application No.: US16520758Application Date: 2019-07-24
-
Publication No.: US10651188B2Publication Date: 2020-05-12
- Inventor: Hideaki Yamakoshi , Takashi Hashimoto , Shinichiro Abe , Yuto Omizu
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: SGPatents PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@776cda84
- Main IPC: H01L27/11568
- IPC: H01L27/11568 ; G11C11/40 ; H01L27/11573 ; H01L29/66 ; H01L29/792 ; H01L21/28
Abstract:
In a MONOS memory having an ONO film, dielectric breakdown and a short circuit are prevented from occurring between the end of the lower surface of a control gate electrode over the ONO film and a semiconductor substrate under the ONO film. When a polysilicon film formed over the ONO film ON is processed to form the control gate electrode, the ONO film is not processed. Subsequently, a second offset spacer covering the side surface of the control gate electrode is formed. Then, using the second offset spacer as a mask, the ONO film is processed. This results in a shape in which in the gate length direction of the control gate electrode, the ends of the ONO film protrude outwardly from the side surfaces of the control gate electrode, respectively.
Information query
IPC分类:
