- 专利标题： Leakage-free implantation-free ETSOI transistors
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申请号： US15650328申请日： 2017-07-14
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公开(公告)号： US10651273B2公开(公告)日： 2020-05-12
- 发明人: Joel P. de Souza , Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Erik Johnson
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L29/08 ; H01L21/02 ; H01L29/267 ; H01L29/26 ; H01L21/425 ; H01L21/445 ; H01L21/768 ; H01L27/12 ; H01L29/417 ; H01L29/45 ; H01L29/06 ; H01L21/84
摘要：
A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (ETSOI) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer. Source and drain regions are formed at opposing positions relative to the device channel. The source and drain regions include an n-type material deposited on the buried dielectric within a thickness of the thin semiconductor layer. A gate structure is formed over the device channel.
公开/授权文献
- US20170317171A1 LEAKAGE-FREE IMPLANTATION-FREE ETSOI TRANSISTORS 公开/授权日：2017-11-02
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