- 专利标题： Field effect transistor circuits
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申请号： US16513376申请日： 2019-07-16
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公开(公告)号： US10651810B1公开(公告)日： 2020-05-12
- 发明人: Ronald Quan
- 申请人： Ronald Quan
- 主分类号： H03K3/33
- IPC分类号： H03K3/33 ; H03K17/16 ; H03K19/00 ; H01L27/088 ; H03K17/042 ; H03G1/00 ; H03G3/30 ; H03K4/06 ; H01L29/808 ; H01P1/22
摘要：
A number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.