Invention Grant
- Patent Title: Method of cleaning process chamber
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Application No.: US15925785Application Date: 2018-03-20
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Publication No.: US10668511B2Publication Date: 2020-06-02
- Inventor: Tsung-Lin Lee , Yi-Ming Lin , Chih-Hung Yeh , Zi-Yuang Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: B08B3/08
- IPC: B08B3/08 ; B08B9/08 ; H01J37/32 ; C23C16/44
Abstract:
A method of cleaning a process chamber includes following steps. A plurality of process films and a plurality of non-process films are alternately formed on an interior surface of the process chamber. A cleaning operation is performed to remove the plurality of process films and the plurality of non-process films from the interior surface of the process chamber.
Public/Granted literature
- US20190291145A1 METHOD OF CLEANING PROCESS CHAMBER Public/Granted day:2019-09-26
Information query
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