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Patent Agency Ranking
公开(公告)号：US10668511B2
公开(公告)日：2020-06-02
申请号：US15925785
申请日：2018-03-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsung-Lin Lee , Yi-Ming Lin , Chih-Hung Yeh , Zi-Yuang Wang
Abstract: A method of cleaning a process chamber includes following steps. A plurality of process films and a plurality of non-process films are alternately formed on an interior surface of the process chamber. A cleaning operation is performed to remove the plurality of process films and the plurality of non-process films from the interior surface of the process chamber.
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公开(公告)号：US20200290095A1
公开(公告)日：2020-09-17
申请号：US16886743
申请日：2020-05-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsung-Lin Lee , Yi-Ming Lin , Chih-Hung Yeh , Zi-Yuang Wang
Abstract: A method of forming a process film includes the following operations. A substrate is transferred into a process chamber having an interior surface. A process film is formed over the substrate, and the process film is also formed on the interior surface of the process chamber. The substrate is transferred out of the process chamber. A non-process film is formed on the interior surface of the process chamber. In some embodiments, porosity of the process film is greater than a porosity of the non-process film.
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公开(公告)号：US20190291145A1
公开(公告)日：2019-09-26
申请号：US15925785
申请日：2018-03-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsung-Lin Lee , Yi-Ming Lin , Chih-Hung Yeh , Zi-Yuang Wang
Abstract: A method of cleaning a process chamber includes following steps. A plurality of process films and a plurality of non-process films are alternately formed on an interior surface of the process chamber. A cleaning operation is performed to remove the plurality of process films and the plurality of non-process films from the interior surface of the process chamber.
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公开(公告)号：US11532459B2
公开(公告)日：2022-12-20
申请号：US16021448
申请日：2018-06-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Hung Yeh , Tsung-Lin Lee , Yi-Ming Lin , Sheng-Chun Yang , Tung-Ching Tseng
IPC: H01J37/32 , C23C16/44 , C23C16/455
Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.
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公开(公告)号：US11666950B2
公开(公告)日：2023-06-06
申请号：US16886743
申请日：2020-05-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsung-Lin Lee , Yi-Ming Lin , Chih-Hung Yeh , Zi-Yuang Wang
CPC classification number: B08B3/08 , B05D1/60 , B08B9/08 , C23C14/06 , C23C16/00 , C23C16/22 , C23C16/4405 , H01J37/32862 , C23C16/4404
Abstract: A method of forming a process film includes the following operations. A substrate is transferred into a process chamber having an interior surface. A process film is formed over the substrate, and the process film is also formed on the interior surface of the process chamber. The substrate is transferred out of the process chamber. A non-process film is formed on the interior surface of the process chamber. In some embodiments, porosity of the process film is greater than a porosity of the non-process film.
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