公开(公告)号：US12249493B2

公开(公告)日：2025-03-11

申请号：US18172563

申请日：2023-02-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sheng-Chun Yang ,  Yi-Ming Lin ,  Po-Wei Liang ,  Chu-Han Hsieh ,  Chih-Lung Cheng ,  Po-Chih Huang

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/683

Abstract: A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.

公开(公告)号：US11594401B2

公开(公告)日：2023-02-28

申请号：US16800220

申请日：2020-02-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sheng-Chun Yang ,  Yi-Ming Lin ,  Po-Wei Liang ,  Chu-Han Hsieh ,  Chih-Lung Cheng ,  Po-Chih Huang

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/46 ,  C23C16/505

Abstract: A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.

公开(公告)号：US11335817B2

公开(公告)日：2022-05-17

申请号：US16845005

申请日：2020-04-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han Lin ,  Chao-Ching Chang ,  Yi-Ming Lin ,  Yen-Ting Chou ,  Yen-Chang Chen ,  Sheng-Chan Li ,  Cheng-Hsien Chou

IPC: H01L31/0216 ,  H01L31/18 ,  H01L27/146 ,  H01L31/0232

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.

公开(公告)号：US20200290095A1

公开(公告)日：2020-09-17

申请号：US16886743

申请日：2020-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Lin Lee ,  Yi-Ming Lin ,  Chih-Hung Yeh ,  Zi-Yuang Wang

IPC: B08B3/08 ,  B08B9/08 ,  H01J37/32 ,  C23C16/44

Abstract: A method of forming a process film includes the following operations. A substrate is transferred into a process chamber having an interior surface. A process film is formed over the substrate, and the process film is also formed on the interior surface of the process chamber. The substrate is transferred out of the process chamber. A non-process film is formed on the interior surface of the process chamber. In some embodiments, porosity of the process film is greater than a porosity of the non-process film.

公开(公告)号：US20190291145A1

公开(公告)日：2019-09-26

申请号：US15925785

申请日：2018-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Lin Lee ,  Yi-Ming Lin ,  Chih-Hung Yeh ,  Zi-Yuang Wang

IPC: B08B3/08 ,  B08B9/08

Abstract: A method of cleaning a process chamber includes following steps. A plurality of process films and a plurality of non-process films are alternately formed on an interior surface of the process chamber. A cleaning operation is performed to remove the plurality of process films and the plurality of non-process films from the interior surface of the process chamber.

公开(公告)号：US11749760B2

公开(公告)日：2023-09-05

申请号：US17744398

申请日：2022-05-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han Lin ,  Chao-Ching Chang ,  Yi-Ming Lin ,  Yen-Ting Chou ,  Yen-Chang Chen ,  Sheng-Chan Li ,  Cheng-Hsien Chou

IPC: H01L31/0216 ,  H01L31/18 ,  H01L27/146 ,  H01L31/0232

CPC classification number: H01L31/0216 ,  H01L27/14636 ,  H01L31/0232 ,  H01L31/18

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.

公开(公告)号：US11670491B2

公开(公告)日：2023-06-06

申请号：US16929881

申请日：2020-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-chun Yang ,  Po-Wei Liang ,  Chao-Hung Wan ,  Yi-Ming Lin ,  Liu Che Kang

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32082 ,  H01J2237/0266

Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.

公开(公告)号：US10668511B2

公开(公告)日：2020-06-02

申请号：US15925785

申请日：2018-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Lin Lee ,  Yi-Ming Lin ,  Chih-Hung Yeh ,  Zi-Yuang Wang

IPC: B08B3/08 ,  B08B9/08 ,  H01J37/32 ,  C23C16/44

Abstract: A method of cleaning a process chamber includes following steps. A plurality of process films and a plurality of non-process films are alternately formed on an interior surface of the process chamber. A cleaning operation is performed to remove the plurality of process films and the plurality of non-process films from the interior surface of the process chamber.

公开(公告)号：US10325949B2

公开(公告)日：2019-06-18

申请号：US16055308

申请日：2018-08-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Chang ,  Sheng-Chan Li ,  Cheng-Hsien Chou ,  Tsung-Wei Huang ,  Min-Hui Lin ,  Yi-Ming Lin

IPC: H01L21/02 ,  H01L27/146 ,  H01L21/3105

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a first surface, a second surface, and a light-sensing region. The image sensor device includes a first isolation structure in the substrate and adjacent to the first surface. The first isolation structure surrounds the light-sensing region. The image sensor device includes a second isolation structure passing through the first isolation structure and the substrate under the first isolation structure. The second isolation structure surrounds the light-sensing region and a portion of the first isolation structure.

公开(公告)号：US20170250211A1

公开(公告)日：2017-08-31

申请号：US15054094

申请日：2016-02-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching Chang ,  Sheng-Chan Li ,  Chih-Hui Huang ,  Jian-Shin Tsai ,  Cheng-Yi Wu ,  Chia-Hsing Chou ,  Yi-Ming Lin ,  Min-Hui Lin ,  Chin-Szu Lee

IPC: H01L27/146 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L27/1463 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76224 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683

Abstract: Semiconductor image sensor devices and manufacturing method of the same are disclosed. The semiconductor image sensor device includes a substrate, a first pixel and a second pixel, and an isolation structure. The first pixel and second pixel are disposed in the substrate, wherein the first and second pixels are neighboring pixels. The isolation structure is disposed in the substrate and between the first and second pixels, wherein the isolation structure includes a dielectric layer, and the dielectric layer includes silicon oxycarbonitride (SiOCN).