Invention Grant
- Patent Title: Techniques based on electromigration characteristics of cell interconnect
-
Application No.: US16205441Application Date: 2018-11-30
-
Publication No.: US10678990B2Publication Date: 2020-06-09
- Inventor: Kuo-Nan Yang , Chung-Hsing Wang , Yi-Kan Cheng , Kumar Lalgudi
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F30/394 ; H01L23/528 ; G06F30/392 ; G06F30/398 ; G06F30/347 ; G06F30/373 ; H01L27/02 ; G06F30/396 ; G06F119/10 ; G06F117/12

Abstract:
In some embodiments, an initial circuit arrangement is provided. The initial circuit arrangement includes cells that include default-rule lines and non-default-rule lines. Line widths of the default-rule lines are selectively increased for a first cell in the initial circuit arrangement, thereby providing a first modified circuit arrangement. A first maximum capacitance value is calculated for the first cell of the first modified circuit arrangement. A second modified circuit arrangement is provided by selectively increasing line widths of the non-default-rule lines in the first modified circuit arrangement. A second maximum capacitance value is calculated for the first cell of the second modified circuit arrangement. A line width of a first non-default-rule line is selectively reduced based on whether the first maximum capacitance value adheres to a predetermined relationship with the second maximum capacitance value. The second modified circuit arrangement is manufactured on a semiconductor substrate.
Public/Granted literature
- US20190108304A1 TECHNIQUES BASED ON ELECTROMIGRATION CHARACTERISTICS OF CELL INTERCONNECT Public/Granted day:2019-04-11
Information query