Invention Grant
- Patent Title: Doped absorption devices
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Application No.: US15747760Application Date: 2015-07-27
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Publication No.: US10680131B2Publication Date: 2020-06-09
- Inventor: Zhihong Huang , Raymond G Beausoleil
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Sheppard Mullin Richter & Hampton LLP
- International Application: PCT/US2015/042250 WO 20150727
- International Announcement: WO2017/019013 WO 20170202
- Main IPC: G02B6/12
- IPC: G02B6/12 ; H01L31/107 ; H01L31/18 ; H01L31/109 ; H01L31/0232 ; H01L31/028 ; H01L31/105

Abstract:
An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.
Public/Granted literature
- US20180219120A1 DOPED ABSORPTION DEVICES Public/Granted day:2018-08-02
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