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公开(公告)号:US10192857B2
公开(公告)日:2019-01-29
申请号:US15338699
申请日:2016-10-31
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Marco Fiorentino , Di Liang , Geza Kurczveil , Raymond G Beausoleil
Abstract: According to an example of the present disclosure a direct bandgap (DBG) semiconductor structure is bonded to an assembly comprising a silicon photonics (SiP) wafer and a complementary metal-oxide-semiconductor (CMOS) wafer. The SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry. The direct bandgap (DBG) semiconductor structure is optically coupled to the photonics circuitry.
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公开(公告)号:US09927572B1
公开(公告)日:2018-03-27
申请号:US15397903
申请日:2017-01-04
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Geza Kurczveil , Di Liang , Zhihong Huang , Raymond G Beausoleil
IPC: G02B6/12
CPC classification number: G02B6/12004 , G02B6/12002 , G02B2006/12061 , G02B2006/12121 , G02B2006/12123
Abstract: Examples include hybrid silicon photonic device structures. Some examples include a method of integrating a photodetector with a photonic device on a silicon wafer to make a hybrid silicon photonic device structure. A dielectric layer is established on the silicon wafer. A pit is formed in a portion of the dielectric layer and the silicon wafer, wherein a bottom of the pit is silicon. A germanium layer is grown in the pit such that a top of the germanium layer is lower than a top of the silicon wafer. The germanium layer comprises the photodetector. A photonic device material that comprises the photonic device is bonded to the silicon wafer without planarization of the silicon wafer.
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公开(公告)号:US10680131B2
公开(公告)日:2020-06-09
申请号:US15747760
申请日:2015-07-27
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Zhihong Huang , Raymond G Beausoleil
IPC: G02B6/12 , H01L31/107 , H01L31/18 , H01L31/109 , H01L31/0232 , H01L31/028 , H01L31/105
Abstract: An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.
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公开(公告)号:US10677995B2
公开(公告)日:2020-06-09
申请号:US15520829
申请日:2014-10-23
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Terrel L Morris , Raymond G Beausoleil , Jason Pelc , Marco Fiorentino , Charles M Santori , Michael W Cumbie
Abstract: One example includes an optical fiber interface. The interface includes a first substrate comprising a pair of opposing surfaces. The substrate includes an opening extending therethrough that defines an inner periphery. One surface of the opposing surfaces of the first substrate can be configured to be bonded to a given surface of a second substrate. The interface also includes a plurality of optical fibers secured to the other opposing surface of the first substrate and extending inwardly from a plurality of surfaces of the inner periphery at fixed locations to align the set of optical fibers to optical inputs/outputs (I/O) of an optical system chip that is coupled to the given surface of the second substrate and received through the opening.
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公开(公告)号:US10432315B2
公开(公告)日:2019-10-01
申请号:US15745709
申请日:2015-07-21
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Janet Chen , Cheng Li , Marco Fiorentino , Raymond G Beausoleil
IPC: G02F1/01 , G02B6/293 , G02F1/025 , H04B10/50 , H04B10/67 , H04B10/80 , H04B10/079 , H04B10/2575
Abstract: One example includes an optical transmitter system. The system includes a waveguide to receive and propagate an optical signal. The system also includes a ring modulation system comprising a ring resonator that is optically coupled to the waveguide and is to resonate a given wavelength of the optical signal in response to an input data signal that is provided to a modulation amplifier to provide carrier injection to change a refractive index of the ring resonator to resonate the given wavelength of the optical signal to modulate the optical signal. The system further includes a tuning controller associated with the ring modulation system. The tuning controller can implement iterative feedback tuning of the ring modulation system based on a relative amplitude of an optical intensity of the given wavelength in the ring resonator and a variable reference amplitude to substantially stabilize the ring resonator with respect to the given wavelength.
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公开(公告)号:US10333516B2
公开(公告)日:2019-06-25
申请号:US15749370
申请日:2015-07-31
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Cheng Li , Kunzhi Yu , Marco Fiorentino , Raymond G Beausoleil
Abstract: In one example, a device includes a photodetector to generate an electrical signal in response to an optical signal and a transimpedance amplifier unit to receive the electrical signal. In one example, the transimpedance amplifier unit may include a first inverter unit, a second inverter unit coupled to the first inverter unit, and a third inverter unit coupled to the second inverter unit. In one example the third inverter unit may include a feedback resistor and a first n-type transistor in parallel to the feedback resistor, where the first n-type transistor is to provide a variable gain of the third inverter unit.
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公开(公告)号:US10534148B2
公开(公告)日:2020-01-14
申请号:US15521371
申请日:2014-10-24
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Terrel L Morris , Raymond G Beausoleil
Abstract: One example includes an optical interconnect device. The optical interconnect device includes a plurality of optical fiber ports coupled to a body portion. The optical interconnect device also includes a plurality of optical fibers that are secured within the body portion. A first portion of the plurality of optical fibers can extend from a first of the plurality of optical fiber ports to a second of the plurality of optical fiber ports, and a second portion of the plurality of optical fibers can extend from the first of the plurality of optical fiber ports to a third of the plurality of optical fiber ports.
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公开(公告)号:US10088634B2
公开(公告)日:2018-10-02
申请号:US15520847
申请日:2014-10-23
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Jason Pelc , Charles M Santori , Marco Fiorentino, Sr. , Raymond G Beausoleil , Terrel L Morris
Abstract: One example includes an optical port-shuffling module. The module includes a plurality of inputs to receive a respective plurality of optical signals. The module also includes a plurality of outputs to provide the respective plurality of optical signals from the optical port-shuffling module. The module further includes a plurality of total-internal-reflection (TIR) mirrors arranged in optical paths of at least a portion of the plurality of optical signals to reflect the at least a portion of the plurality of optical signals to at least a portion of the plurality of outputs to shuffle the plurality of optical signals between the plurality of inputs and the plurality of outputs.
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公开(公告)号:US20170045762A1
公开(公告)日:2017-02-16
申请号:US15305930
申请日:2014-05-07
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Zhihong Huang , Di Liang , Zhen Peng , Raymond G Beausoleil
CPC classification number: G02F1/065 , G02B6/122 , G02B6/29341 , G02B2006/12061 , G02B2006/12085 , G02B2006/12142 , G02F1/0018 , G02F1/025 , G02F2201/12 , G02F2202/022 , G02F2202/103 , G02F2202/105 , G02F2203/055 , G02F2203/15
Abstract: A polymer-clad optical modulator includes a substrate comprising an insulating material; a silicon microring on the substrate; silicon waveguides on the substrate adjacent the silicon microring; an electro-optic polymer covering the silicon microring and the silicon waveguide; and an electrical contact on top of the electro-optic polymer. The silicon microring or a portion of an adjacent silicon layer is lightly doped. A polymer-clad depletion type optical modulator and a polymer-clad carrier injection type optical modulator, each employing the lightly doped silicon microring or an adjacent lightly doped silicon layer, are also described.
Abstract translation: 包含聚合物的光调制器包括:包含绝缘材料的基片; 衬底上的硅微环; 衬底上的硅波导与硅微环相邻; 覆盖硅微环和硅波导的电光聚合物; 以及在电光聚合物的顶部上的电接触。 硅微环或相邻硅层的一部分被轻掺杂。 还描述了使用轻掺杂硅微环或相邻的轻掺杂硅层的聚合物包层耗尽型光调制器和聚合物包层载流子注入型光调制器。
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公开(公告)号:US11086966B2
公开(公告)日:2021-08-10
申请号:US15757043
申请日:2015-09-08
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Jason Pelc , Thomas Van Vaerenbergh , Raymond G Beausoleil
Abstract: In example implementations, an apparatus includes a plurality of nodes, a pump coupled to the plurality of nodes and a connection network. In one example, each one of the plurality of nodes may store a value. The pump provides energy to the each one of the plurality of nodes. The connection network may include a two dimensional array of elements, wherein each group of the two dimensional array of elements is in communication with a respective one of the plurality of nodes, wherein the connection network may be tuned with parameters associated with encoding of an Ising problem. The connection network may process the value stored in each one of the plurality of nodes. The Ising problem may be solved by the value stored in each one of the plurality of nodes at a minimum energy level.
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