- 专利标题： Magnetic tunnel junction device
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申请号： US16443875申请日： 2019-06-18
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公开(公告)号： US10680167B2公开(公告)日： 2020-06-09
- 发明人: Shinji Yuasa
- 申请人： Japan Science and Technology Agency , National Institute of Advanced Industrial Science and Technology
- 申请人地址： JP Kawaguchi-shi JP Tokyo
- 专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- 当前专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- 当前专利权人地址： JP Kawaguchi-shi JP Tokyo
- 代理机构： Xsensus LLP
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1c9fb932 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@533175a4
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/00 ; H01L43/10 ; H01F10/13 ; G11C11/15 ; H01L49/02 ; H01L27/11507 ; B82Y25/00 ; G11C11/16 ; H01L27/22 ; H01L43/08 ; H01L43/12 ; H01F10/32 ; H01L43/02 ; B82Y10/00
摘要：
The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.
公开/授权文献
- US20200020851A1 MAGNETIC TUNNEL JUNCTION DEVICE 公开/授权日：2020-01-16