- 专利标题： Method of pulsed laser-based large area graphene synthesis on metallic and crystalline substrates
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申请号： US15116364申请日： 2015-02-04
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公开(公告)号： US10683586B2公开(公告)日： 2020-06-16
- 发明人: Barbaros Ozyilmaz , Andreas Volker Stier , Chee Tat Toh , Antonio Helio Castro Neto
- 申请人： National University of Singapore
- 申请人地址： SG Singapore
- 专利权人： National University of Singapore
- 当前专利权人： National University of Singapore
- 当前专利权人地址： SG Singapore
- 代理机构： Hamilton, Brook, Smith & Reynolds, P.C.
- 国际申请： PCT/SG2015/000029 WO 20150204
- 国际公布： WO2015/119572 WO 20150813
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; C30B25/10 ; C01B32/188 ; C01B32/186 ; C23C16/48 ; C30B1/02 ; C30B25/18 ; C30B29/02 ; B82Y40/00
摘要：
A method of making graphene includes providing a seed gas in the presence of a metallic substrate, providing a pulsed, ultraviolet laser beam, and moving the substrate or the laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. In some instances, the substrate can have a surface with two-fold atomic symmetry. A method of recrystallizing graphene includes providing a pulsed, ultraviolet laser beam to a polycrystalline graphene sheet.