- 专利标题： Semiconductor memory devices and methods for fabricating the same
-
申请号： US15514239申请日： 2014-09-26
-
公开(公告)号： US10685972B2公开(公告)日： 2020-06-16
- 发明人: Sunggil Kim , Phil Ouk Nam , Gukhyon Yon , Sunghae Lee , Woojin Jang , Dongchul Yoo , Hunhyeong Lim , Junggeun Jee , Kihyun Hwang
- 申请人： Sunggil Kim , Phil Ouk Nam , Gukhyon Yon , Sunghae Lee , Woojin Jang , Dongchul Yoo , Hunhyeong Lim , Junggeun Jee , Kihyun Hwang
- 申请人地址： KR Suwon-Si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-do
- 代理机构： Lee IP Law, PC
- 国际申请： PCT/IB2014/064848 WO 20140926
- 国际公布： WO2016/046602 WO 20160331
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11568 ; H01L21/28 ; H01L27/115 ; H01L49/02 ; H01L21/02 ; H01L21/311 ; H01L27/1157 ; H01L29/10
摘要：
The inventive concepts provide semiconductor memory devices and methods for fabricating the same. The semiconductor memory device may include a plurality of gates vertically stacked on a substrate, a vertical channel filling a channel hole vertically penetrating the plurality of gates, and a memory layer vertically extending on an inner sidewall of the channel. The vertical channel may include a lower channel filling a lower region of the channel hole and electrically connected to the substrate, and an upper channel filling an upper region of the channel hole and contacting the lower channel. The upper channel may extend along the memory layer and the lower channel in the upper region of the channel hole and may have a uniform thickness.
公开/授权文献
信息查询
IPC分类:
