Invention Grant
- Patent Title: Nonvolatile memory cell, memory cell unit, and information writing method, and electronic apparatus
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Application No.: US16301063Application Date: 2017-04-18
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Publication No.: US10706903B2Publication Date: 2020-07-07
- Inventor: Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Hiroyuki Uchida
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: CHIP Law Group
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2c9a11a3
- International Application: PCT/JP2017/015610 WO 20170418
- International Announcement: WO2017/208653 WO 20171207
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L29/82 ; H01L43/08 ; H01L27/22 ; H01L43/02 ; H01F10/32
Abstract:
A nonvolatile memory cell includes a layered structure body formed by layering a storage layer that stores information in accordance with a magnetization direction and a magnetization fixed layer that defines a magnetization direction of the storage layer; and a heating layer that heats the magnetization fixed layer to control a magnetization direction of the magnetization fixed layer.
Public/Granted literature
- US20190189172A1 NONVOLATILE MEMORY CELL, MEMORY CELL UNIT, AND INFORMATION WRITING METHOD, AND ELECTRONIC APPARATUS Public/Granted day:2019-06-20
Information query
