Invention Grant
- Patent Title: Three-dimensional memory device having bonding structures connected to bit lines and methods of making the same
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Application No.: US16284502Application Date: 2019-02-25
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Publication No.: US10707228B2Publication Date: 2020-07-07
- Inventor: Jixin Yu , Tae-Kyung Kim , Johann Alsmeier , Yan Li , Jian Chen
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/11578 ; G11C5/02 ; G11C5/06

Abstract:
Three-dimensional memory devices in the form of a memory die includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack, in which each of the memory stack structures includes a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. Bit lines are electrically connected to an end portion of a respective one of the vertical semiconductor channels. Bump connection via structures contact a top surface of a respective one of the bit lines, in which each of the bump connection via structures has a greater lateral dimension along a lengthwise direction of the bit lines than along a widthwise direction of the bit lines. Metallic bump structures of another semiconductor die contact respective ones of the bump connection via structures to make respective electrical connections between the two dies.
Public/Granted literature
Information query
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