Invention Grant
- Patent Title: Group IIIA-N HEMT with a tunnel diode in the gate stack
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Application No.: US16456040Application Date: 2019-06-28
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Publication No.: US10707324B2Publication Date: 2020-07-07
- Inventor: Chang Soo Suh , Dong Seup Lee , Jungwoo Joh , Naveen Tipirneni , Sameer Prakash Pendharkar
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L29/10 ; H01L21/8252 ; H01L27/06 ; H01L27/085 ; H01L23/535 ; H01L29/20 ; H01L27/07 ; H01L27/088

Abstract:
One example provides an enhancement-mode High Electron Mobility Transistor (HEMT) includes a substrate, a Group IIIA-N active layer over the substrate, a Group IIIA-N barrier layer over the active layer, and at least one isolation region through the barrier layer to provide an isolated active area having the barrier layer on the active layer. A gate stack is located between source and drain contacts to the active layer. A tunnel diode in the gate stack includes an n-GaN layer on an InGaN layer on a p-GaN layer located on the barrier layer.
Public/Granted literature
- US20190319111A1 GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK Public/Granted day:2019-10-17
Information query
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