Invention Grant
- Patent Title: QE approach by double-side, multi absorption structure
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Application No.: US16580350Application Date: 2019-09-24
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Publication No.: US10707361B2Publication Date: 2020-07-07
- Inventor: Po-Han Huang , Chien Nan Tu , Chi-Yuan Wen , Ming-Chi Wu , Yu-Lung Yeh , Hsin-Yi Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/146 ; H01L27/30 ; H01L31/02 ; H01L31/0224

Abstract:
The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.
Public/Granted literature
- US20200020816A1 QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE Public/Granted day:2020-01-16
Information query
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