Invention Grant
- Patent Title: Memory system including a memory device, and methods of operating the memory system and memory device
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Application No.: US16248568Application Date: 2019-01-15
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Publication No.: US10714194B2Publication Date: 2020-07-14
- Inventor: Hye-Jin Yim , Sang-Yong Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@51b700d5
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C16/34 ; G11C29/52 ; G11C29/42 ; G06F11/07 ; G11C16/10 ; G11C16/26
Abstract:
A method is provided for operating a memory device. The method includes counting, from among memory cells, a number of first off-cells with respect to a first reading voltage and a number of second off-cells with respect to a second reading voltage, comparing the number of first off-cells and the number of second off-cells, and determining, based on a result of the comparing, whether a programming error exists in a storage region in which the memory cells are included.
Public/Granted literature
- US20190147965A1 MEMORY SYSTEM INCLUDING A MEMORY DEVICE, AND METHODS OF OPERATING THE MEMORY SYSTEM AND MEMORY DEVICE Public/Granted day:2019-05-16
Information query
