- 专利标题: Semiconductor package and method of forming the same
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申请号: US16113665申请日: 2018-08-27
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公开(公告)号: US10714426B2公开(公告)日: 2020-07-14
- 发明人: Cheng-Hsien Hsieh , Li-Han Hsu , Wei-Cheng Wu , Hsien-Wei Chen , Der-Chyang Yeh , Chi-Hsi Wu , Chen-Hua Yu , Tsung-Shu Lin
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/538
- IPC分类号: H01L23/538 ; H01L21/48 ; H01L25/10 ; H01L25/00 ; H01L23/31 ; H01L23/498 ; H01L21/56
摘要:
An embodiment is a structure including a first die having an active surface with a first center point, a molding compound at least laterally encapsulating the first die, and a first redistribution layer (RDL) including metallization patterns extending over the first die and the molding compound. A first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.
公开/授权文献
- US20180366412A1 Semiconductor Package and Method of Forming the Same 公开/授权日:2018-12-20
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