An array, such as an MRAM (Magnetic Random Access Memory) array formed of a multiplicity of layered thin film devices, such as MTJ (Magnetic Tunnel Junction) devices, can be simultaneously formed in a multiplicity of horizontal widths in the 60 nm range while all having top electrodes with substantially equal thicknesses and coplanar upper surfaces. This allows such a multiplicity of devices to be electrically connected by a common conductor without the possibility of electrical opens and with a resulting high yield.