Invention Grant
- Patent Title: Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device
-
Application No.: US16369419Application Date: 2019-03-29
-
Publication No.: US10724149B2Publication Date: 2020-07-28
- Inventor: Johannes Freund , Thomas Wuebben , Helmut Oefner , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@a1adbdb
- Main IPC: C30B15/04
- IPC: C30B15/04 ; C30B15/02 ; B28D5/00 ; H01L29/739 ; C30B15/10 ; C30B29/06 ; C30B33/00 ; B28D5/04 ; H01L21/66 ; H01L29/66

Abstract:
In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.
Public/Granted literature
- US20190249330A1 METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2019-08-15
Information query
IPC分类: