- Patent Title: Uniform EUV photoresist patterning utilizing pulsed plasma process
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Application No.: US15853243Application Date: 2017-12-22
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Publication No.: US10727075B2Publication Date: 2020-07-28
- Inventor: Sang Wook Kim , Zhibin Wang , Kyoungjin Lee , Byungkook Kong
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/027 ; H01L21/311 ; H01L21/02 ; H01L21/033
Abstract:
Embodiments of the present disclosure generally provide a method and apparatus for forming features in a material layer utilizing EUV technologies. In one embodiment, a method of patterning a substrate includes disposing a patterned photoresist layer on a mask layer disposed on a substrate, wherein the patterned photoresist layer has openings with different widths defined in the patterned photoresist layer, forming a compensatory layer along sidewalls of the patterned photoresist layer to modify the widths of the openings and etching the mask layer through the openings with the modified width.
Public/Granted literature
- US20190198338A1 UNIFORM EUV PHOTORESIST PATTERNING UTILIZING PULSED PLASMA PROCESS Public/Granted day:2019-06-27
Information query
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