公开(公告)号：US10727075B2

公开(公告)日：2020-07-28

申请号：US15853243

申请日：2017-12-22

Applicant: Applied Materials, Inc.

Inventor： Sang Wook Kim ,  Zhibin Wang ,  Kyoungjin Lee ,  Byungkook Kong

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033

Abstract: Embodiments of the present disclosure generally provide a method and apparatus for forming features in a material layer utilizing EUV technologies. In one embodiment, a method of patterning a substrate includes disposing a patterned photoresist layer on a mask layer disposed on a substrate, wherein the patterned photoresist layer has openings with different widths defined in the patterned photoresist layer, forming a compensatory layer along sidewalls of the patterned photoresist layer to modify the widths of the openings and etching the mask layer through the openings with the modified width.

公开(公告)号：US20180292756A1

公开(公告)日：2018-10-11

申请号：US15481885

申请日：2017-04-07

Applicant: Applied materials, Inc.

Inventor： Byungkook Kong ,  Sangwook Kim ,  SeungHyun Park ,  Abhijeet Bagal ,  Kyoungjin Lee ,  Daksh Agarwal

IPC: G03F7/20 ,  G03F7/36 ,  G03F7/16 ,  H01L21/033

Abstract: A coating layer is deposited on a patterned feature on a first portion of a substrate. A second portion of the substrate outside the patterned feature is etched. The etching and the depositing are performed in a single pulsed plasma process using at least one of a pulsed source power signal and a pulsed bias power signal.