Invention Grant
- Patent Title: Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
-
Application No.: US16110846Application Date: 2018-08-23
-
Publication No.: US10741318B2Publication Date: 2020-08-11
- Inventor: Yugo Ishitani , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2d1ea80f com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@14184fdc
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L27/22 ; H01L43/02 ; H01F10/32 ; H01L43/06 ; G11C11/16 ; H03H11/04

Abstract:
A spin current magnetization rotational element is provided in which deterioration in the degree of integration is prevented from being caused and a magnetization rotation can be easily realized. A spin current magnetization rotational element includes a spin-orbit torque wiring which extends in a first direction, a first ferromagnetic layer which is laminated in a second direction intersecting the first direction; and a first magnetic field applying layer which is disposed to be separated from the first ferromagnetic layer in the first direction and configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer to the first ferromagnetic layer.
Public/Granted literature
Information query
IPC分类: