公开(公告)号：US10707005B2

公开(公告)日：2020-07-07

申请号：US16110846

申请日：2018-08-23

Applicant: TDK CORPORATION

Inventor： Yugo Ishitani ,  Tomoyuki Sasaki

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01F10/32 ,  H01L43/06 ,  G11C11/16 ,  H03H11/04

Abstract: A spin current magnetization rotational element is provided in which deterioration in the degree of integration is prevented from being caused and a magnetization rotation can be easily realized. A spin current magnetization rotational element includes a spin-orbit torque wiring which extends in a first direction, a first ferromagnetic layer which is laminated in a second direction intersecting the first direction; and a first magnetic field applying layer which is disposed to be separated from the first ferromagnetic layer in the first direction and configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer to the first ferromagnetic layer.

公开(公告)号：US10741318B2

公开(公告)日：2020-08-11

申请号：US16110846

申请日：2018-08-23

Applicant: TDK CORPORATION

Inventor： Yugo Ishitani ,  Tomoyuki Sasaki

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01F10/32 ,  H01L43/06 ,  G11C11/16 ,  H03H11/04

Abstract: A spin current magnetization rotational element is provided in which deterioration in the degree of integration is prevented from being caused and a magnetization rotation can be easily realized. A spin current magnetization rotational element includes a spin-orbit torque wiring which extends in a first direction, a first ferromagnetic layer which is laminated in a second direction intersecting the first direction; and a first magnetic field applying layer which is disposed to be separated from the first ferromagnetic layer in the first direction and configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer to the first ferromagnetic layer.

公开(公告)号：US20240306515A1

公开(公告)日：2024-09-12

申请号：US18598111

申请日：2024-03-07

Applicant: TDK CORPORATION

Inventor： Yugo Ishitani

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  H10B61/00 ,  H10N50/85

Abstract: This magnetic element includes a spin orbit torque wiring, and a laminate including a first ferromagnetic layer. The spin orbit torque wiring includes three or more layers. Combinations of materials of the layers in the spin orbit torque wiring are asymmetric in a lamination direction. A sequence of material types in which the materials of the layers of the spin orbit torque wiring are arranged from a first surface in contact with the laminate toward a second surface on a side opposite to the first surface differs from a sequence of material types in which the materials of the layers of the spin orbit torque wiring are arranged from the second surface toward the first surface.

公开(公告)号：US11770978B2

公开(公告)日：2023-09-26

申请号：US17104931

申请日：2020-11-25

Applicant: TDK CORPORATION

Inventor： Yugo Ishitani ,  Tomoyuki Sasaki ,  Yohei Shiokawa

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H10B61/22 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.

公开(公告)号：US12290002B2

公开(公告)日：2025-04-29

申请号：US18232941

申请日：2023-08-11

Applicant: TDK CORPORATION

Inventor： Yugo Ishitani ,  Tomoyuki Sasaki ,  Yohei Shiokawa

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.

公开(公告)号：US11790967B2

公开(公告)日：2023-10-17

申请号：US17420053

申请日：2020-05-15

Applicant: TDK CORPORATION

Inventor： Shogo Yamada ,  Tatsuo Shibata ,  Yugo Ishitani

IPC: G11C11/16 ,  H01L29/82 ,  H10N50/10 ,  H01L27/105 ,  G11C11/15

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L29/82 ,  H10N50/10 ,  G11C11/15 ,  H01L27/105

Abstract: A magnetic domain wall displacement element includes a first ferromagnetic layer, a second ferromagnetic layer extending in a second direction and magnetically recordable, a nonmagnetic layer, and a first conductive part having a first intermediate layer and a second conductive part having a second intermediate layer, in which the first intermediate layer is sandwiched between first and second magnetization regions and exhibiting first and second magnetization directions, the second intermediate layer is sandwiched between a third magnetization region and exhibiting the second magnetization direction and a fourth magnetization region exhibiting the first magnetization direction in the first direction, and an area of the first magnetization region is larger than an area of the second magnetization region and an area of the third magnetization region is smaller than an area of the fourth magnetization region in a cross section in the first direction and the second direction.