Invention Grant
- Patent Title: Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers
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Application No.: US16267636Application Date: 2019-02-05
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Publication No.: US10756231B2Publication Date: 2020-08-25
- Inventor: Thomas A. Kuhr , Robert David Schmidt , Daniel Carleton Driscoll , Brian T. Collins
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: CREE, INC.
- Current Assignee: CREE, INC.
- Current Assignee Address: US NC Durham
- Agency: Withrow & Terranova, P.L.L.C.
- Agent Vincent K. Gustafson
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/06 ; H01L33/32 ; H01L33/02

Abstract:
Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
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