公开(公告)号：US10756231B2

公开(公告)日：2020-08-25

申请号：US16267636

申请日：2019-02-05

Applicant: Cree, Inc.

Inventor： Thomas A. Kuhr ,  Robert David Schmidt ,  Daniel Carleton Driscoll ,  Brian T. Collins

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/02

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

公开(公告)号：US20200381581A1

公开(公告)日：2020-12-03

申请号：US16998651

申请日：2020-08-20

Applicant: Cree, Inc.

Inventor： Thomas A. Kuhr ,  Robert David Schmidt ,  Daniel Carleton Driscoll ,  Brian T. Collins

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/02

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include Ill nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

公开(公告)号：US09985168B1

公开(公告)日：2018-05-29

申请号：US14546524

申请日：2014-11-18

Applicant: Cree, Inc.

Inventor： Thomas A. Kuhr ,  Robert David Schmidt ,  Daniel Carleton Driscoll ,  Brian T. Collins

IPC: H01L29/06 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layers, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

公开(公告)号：US11088295B2

公开(公告)日：2021-08-10

申请号：US16998651

申请日：2020-08-20

Applicant: Cree, Inc.

Inventor： Thomas A. Kuhr ,  Robert David Schmidt ,  Daniel Carleton Driscoll ,  Brian T. Collins

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/02

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include Ill nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

公开(公告)号：US20200075798A1

公开(公告)日：2020-03-05

申请号：US16118788

申请日：2018-08-31

Applicant: Cree, Inc.

Inventor： Joseph G. Sokol ,  Jefferson W. Plummer ,  Caleb A. Kent ,  Thomas A. Kuhr ,  Robert David Schmidt

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

Abstract: Group III nitride light emitting diode (LED) structures with improved electrical performance are disclosed. A Group III nitride LED structure includes one or more n-type layers, one or more p-type layers, and an active region that includes a plurality of sequentially arranged barrier-well units. In certain embodiments, doping profiles of barrier layers of the barrier-well units are configured such that a doping concentration in some barrier-well units is different than a doping concentration in other barrier-well units. In certain embodiments, a doping profile of a particular barrier layer is non-uniform. In addition to active region configurations, the doping profiles and sequence of the n-type layers and p-type layers are configured to provide Group III nitride structures with higher efficiency, lower forward voltages, and improved forward voltage performance at elevated currents and temperatures.

公开(公告)号：US20190172971A1

公开(公告)日：2019-06-06

申请号：US16267636

申请日：2019-02-05

Applicant: Cree, Inc.

Inventor： Thomas A. Kuhr ,  Robert David Schmidt ,  Daniel Carleton Driscoll ,  Brian T. Collins

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/0025 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

公开(公告)号：US10224454B2

公开(公告)日：2019-03-05

申请号：US15970959

申请日：2018-05-04

Applicant: Cree, Inc.

Inventor： Thomas A. Kuhr ,  Robert David Schmidt ,  Daniel Carleton Driscoll ,  Brian T. Collins

IPC: H01L29/06 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

公开(公告)号：US20180254377A1

公开(公告)日：2018-09-06

申请号：US15970959

申请日：2018-05-04

Applicant: Cree, Inc.

Inventor： Thomas A. Kuhr ,  Robert David Schmidt ,  Daniel Carleton Driscoll ,  Brian T. Collins

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L33/0025 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.

公开(公告)号：US20150221815A1

公开(公告)日：2015-08-06

申请号：US14170176

申请日：2014-01-31

Applicant: Cree, Inc.

Inventor： David Clatterbuck ,  Harry Seibel ,  Romit Dhar ,  Robert David Schmidt ,  Daniel Carleton Driscoll ,  Michael John Bergmann

IPC: H01L33/00 ,  H01L33/12 ,  H01L27/15 ,  H01L33/32 ,  H01L33/50

CPC classification number: H01L33/0004 ,  H01L33/32 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A solid state light emitting device includes a solid state light emitter and a lumiphoric material that are selected for use with one another to provide light emissions with improved (i.e., reduced) thermal droop A solid state emitter having a short peak emission wavelength (e.g., in a visible range at or below 440 nm) seemingly less than optimal at room temperature for use with a particular lumiphor can trigger more efficient stimulation of lumiphor emissions at high temperatures. Enhanced epitaxial structures also inhibit decrease of radiant flux by LEDs at elevated temperatures.

Abstract translation: 固态发光器件包括固态光发射器和被选择用于彼此使用的发光材料，以提供具有短峰值发射波长的改进（即，减少）的热下降固体发射体的光发射（例如， 在等于或低于440nm的可见光范围内）似乎不太适合在室温下与特定的荧光探针一起使用，可以在高温下触发更有效地刺激发光体的辐射。 增强的外延结构还抑制LED在升高的温度下的辐射通量的降低。