Invention Grant
- Patent Title: Temperature instability-aware circuit
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Application No.: US16654677Application Date: 2019-10-16
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Publication No.: US10756735B2Publication Date: 2020-08-25
- Inventor: Chia-Hui Chen , Wan-Yen Lin , Tsung-Hsin Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H03K19/003
- IPC: H03K19/003 ; H03K17/00 ; H03K3/356

Abstract:
A circuit includes: a first swing reduction circuit coupled between an input/output pad and a buffer circuit, and a second swing reduction circuit coupled between the input/output pad and the buffer circuit. The first swing reduction circuit comprises a first transistor gated by a first bias voltage and comprises a second transistor drained by the first bias voltage. The first swing reduction circuit is configured to increase a voltage at a first node in the buffer circuit when a voltage applied on the input/output pad is equal to a first supply voltage. The second swing reduction circuit is configured to reduce a voltage at a second node in the buffer circuit when the voltage applied on the input/output pad is equal to a second supply voltage.
Public/Granted literature
- US20200052699A1 TEMPERATURE INSTABILITY-AWARE CIRCUIT Public/Granted day:2020-02-13
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