TEMPERATURE INSTABILITY-AWARE CIRCUIT
    1.
    发明申请

    公开(公告)号:US20200052699A1

    公开(公告)日:2020-02-13

    申请号:US16654677

    申请日:2019-10-16

    Abstract: A circuit includes: a first swing reduction circuit coupled between an input/output pad and a buffer circuit, and a second swing reduction circuit coupled between the input/output pad and the buffer circuit. The first swing reduction circuit comprises a first transistor gated by a first bias voltage and comprises a second transistor drained by the first bias voltage. The first swing reduction circuit is configured to increase a voltage at a first node in the buffer circuit when a voltage applied on the input/output pad is equal to a first supply voltage. The second swing reduction circuit is configured to reduce a voltage at a second node in the buffer circuit when the voltage applied on the input/output pad is equal to a second supply voltage.

    Temperature instability-aware circuit

    公开(公告)号:US10756735B2

    公开(公告)日:2020-08-25

    申请号:US16654677

    申请日:2019-10-16

    Abstract: A circuit includes: a first swing reduction circuit coupled between an input/output pad and a buffer circuit, and a second swing reduction circuit coupled between the input/output pad and the buffer circuit. The first swing reduction circuit comprises a first transistor gated by a first bias voltage and comprises a second transistor drained by the first bias voltage. The first swing reduction circuit is configured to increase a voltage at a first node in the buffer circuit when a voltage applied on the input/output pad is equal to a first supply voltage. The second swing reduction circuit is configured to reduce a voltage at a second node in the buffer circuit when the voltage applied on the input/output pad is equal to a second supply voltage.

    Buffer circuit between different voltage domains

    公开(公告)号:US11171634B2

    公开(公告)日:2021-11-09

    申请号:US16875849

    申请日:2020-05-15

    Abstract: A circuit includes a first inverter and a second inverter. The first inverter is coupled to an input terminal. The input terminal receives an input signal varying in a first voltage domain. The second inverter is coupled between the first inverter and an output terminal. The second inverter generates an output signal varying in a second voltage domain. The first inverter includes a first PMOS transistor and a first NMOS transistor. The first PMOS transistor is biased by a first input tracking signal generated from the input signal. The first input tracking signal varies in a third voltage domain. The first NMOS transistor is biased by a second input tracking signal generated from the input signal. The second input tracking signal varies in the second voltage domain.

    TEMPERATURE INSTABILITY-AWARE CIRCUIT
    4.
    发明申请

    公开(公告)号:US20190173471A1

    公开(公告)日:2019-06-06

    申请号:US16156507

    申请日:2018-10-10

    Abstract: A circuit includes: a first type of swing reduction circuit coupled between an input/output pad and a buffer circuit; and a second type of swing reduction circuit coupled between the input/output pad and the buffer circuit, wherein the first type of swing reduction circuit is configured to increase a voltage received by respective gates of a first subset of transistors of the buffer circuit when a voltage applied on the input/output pad is equal to a first supply voltage, and the second type of swing reduction circuit is configured to reduce a voltage received by respective gates of a second subset of transistors of the buffer circuit when the voltage applied on the input/output pad is equal to a second supply voltage.

    Temperature instability-aware circuit

    公开(公告)号:US11190187B2

    公开(公告)日:2021-11-30

    申请号:US17001022

    申请日:2020-08-24

    Abstract: A circuit includes: a first swing reduction circuit coupled between an input/output pad and a buffer circuit, and a second swing reduction circuit coupled between the input/output pad and the buffer circuit. The first swing reduction circuit comprises a first transistor gated by a first bias voltage and comprises a second transistor drained by the first bias voltage. The first swing reduction circuit is configured to increase a voltage at a first node in the buffer circuit when a voltage applied on the input/output pad is equal to a first supply voltage. The second swing reduction circuit is configured to reduce a voltage at a second node in the buffer circuit when the voltage applied on the input/output pad is equal to a second supply voltage.

    Temperature instability-aware circuit

    公开(公告)号:US10483973B2

    公开(公告)日:2019-11-19

    申请号:US16156507

    申请日:2018-10-10

    Abstract: A circuit includes: a first type of swing reduction circuit coupled between an input/output pad and a buffer circuit; and a second type of swing reduction circuit coupled between the input/output pad and the buffer circuit, wherein the first type of swing reduction circuit is configured to increase a voltage received by respective gates of a first subset of transistors of the buffer circuit when a voltage applied on the input/output pad is equal to a first supply voltage, and the second type of swing reduction circuit is configured to reduce a voltage received by respective gates of a second subset of transistors of the buffer circuit when the voltage applied on the input/output pad is equal to a second supply voltage.

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