- 专利标题: Method for producing a semiconductor device by means of computer-aided development of test scenarios
-
申请号: US16038223申请日: 2018-07-18
-
公开(公告)号: US10761140B2公开(公告)日: 2020-09-01
- 发明人: Oliver Frank , Christoph Hazott , Georg Krebelder , Bruno Mariacher , Otto Pfabigan , Sebastian Pointner , Ralf Reiterer , Florian Starzer
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Harrity & Harrity, LLP
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@60370b6f
- 主分类号: G01R31/319
- IPC分类号: G01R31/319 ; G06F30/33 ; G06F30/327 ; G01R31/317 ; H01L21/66
摘要:
A method for producing a semiconductor device is described. In accordance with one example embodiment, the method comprises providing a virtual DUT in the form of a behavior model of the semiconductor device and developing at least one test in a test development environment for an automatic test equipment (ATE). In this case, commands are generated by means of the test development environment, which commands are converted into test signals by means of a software interface, which test signals are fed to the virtual DUT and are processable by the latter. The software interface processes response signals of the virtual DUT and reports information dependent on the response signals back to the test development environment.
公开/授权文献
信息查询
IPC分类: