Invention Grant
- Patent Title: Semiconductor structure with doped via plug and method for forming the same
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Application No.: US16021216Application Date: 2018-06-28
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Publication No.: US10763168B2Publication Date: 2020-09-01
- Inventor: Tung-Po Hsieh , Su-Hao Liu , Hong-Chih Liu , Jing-Huei Huang , Jie-Huang Huang , Lun-Kuang Tan , Huicheng Chang , Liang-Yin Chen , Kuo-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/66 ; H01L29/78 ; H01L23/532 ; H01L21/8234 ; H01L23/522 ; H01L27/088 ; H01L27/092 ; H01L21/8238 ; H01L29/417
Abstract:
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a first contact plug and a first via plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The first contact plug is positioned over the source/drain structure. The first via plug is positioned over the first contact plug. The first via plug includes a first group IV element.
Public/Granted literature
- US20190157148A1 SEMICONDUCTOR STRUCTURE WITH DOPED VIA PLUG AND METHOD FOR FORMING THE SAME Public/Granted day:2019-05-23
Information query
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