公开(公告)号：US11145751B2

公开(公告)日：2021-10-12

申请号：US15939389

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Su-Hao Liu ,  Chun-Hao Kung ,  Liang-Yin Chen ,  Huicheng Chang ,  Kei-Wei Chen ,  Hui-Chi Huang ,  Kao-Feng Liao ,  Chih-Hung Chen ,  Jie-Huang Huang ,  Lun-Kuang Tan ,  Wei-Ming You

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/78

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.

公开(公告)号：US10763168B2

公开(公告)日：2020-09-01

申请号：US16021216

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Po Hsieh ,  Su-Hao Liu ,  Hong-Chih Liu ,  Jing-Huei Huang ,  Jie-Huang Huang ,  Lun-Kuang Tan ,  Huicheng Chang ,  Liang-Yin Chen ,  Kuo-Ju Chen

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L23/532 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/417

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a first contact plug and a first via plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The first contact plug is positioned over the source/drain structure. The first via plug is positioned over the first contact plug. The first via plug includes a first group IV element.