Invention Grant
- Patent Title: Integrated circuit backside metallization
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Application No.: US16228962Application Date: 2018-12-21
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Publication No.: US10763230B2Publication Date: 2020-09-01
- Inventor: Hiroyuki Sada , Shoichi Iriguchi , Genki Yano , Luu Thanh Nguyen , Ashok Prabhu , Anindya Poddar , Yi Yan , Hau Nguyen
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Dawn Jos; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/683 ; H01L23/00 ; H01L23/495

Abstract:
A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.
Information query
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