Invention Grant
- Patent Title: Bump bond structure for enhanced electromigration performance
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Application No.: US16047888Application Date: 2018-07-27
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Publication No.: US10763231B2Publication Date: 2020-09-01
- Inventor: Dibyajat Mishra , Ashok Prabhu , Tomoko Noguchi , Luu Thanh Nguyen , Anindya Poddar , Makoto Yoshino , Hau Nguyen
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Dawn Jos; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L23/495

Abstract:
A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.
Public/Granted literature
- US20200035633A1 BUMP BOND STRUCTURE FOR ENHANCED ELECTROMIGRATION PERFORMANCE Public/Granted day:2020-01-30
Information query
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