公开(公告)号：US11923320B2

公开(公告)日：2024-03-05

申请号：US17139417

申请日：2020-12-31

Applicant: Texas Instruments Incorporated

Inventor： Tomoko Noguchi ,  Mutsumi Masumoto ,  Kengo Aoya ,  Masamitsu Matsuura

IPC: H01L21/78 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/552

CPC classification number: H01L23/552 ,  H01L21/561 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L24/48 ,  H01L2224/48245

Abstract: A semiconductor device includes a semiconductor die having a top side surface comprising a semiconductor material including circuitry therein having bond pads connected to nodes in the circuitry, a bottom side surface, and sidewall surfaces between the top side surface and the bottom side surface. A metal coating layer including a bottom side metal layer is over the bottom side surface that extends continuously to a sidewall metal layer on the sidewall surfaces. The sidewall metal layer defines a sidewall plane that is at an angle from 10° to 60° relative to a normal projected from a bottom plane defined by the bottom side metal layer.

公开(公告)号：US20200035633A1

公开(公告)日：2020-01-30

申请号：US16047888

申请日：2018-07-27

Applicant: Texas Instruments Incorporated

Inventor： Dibyajat Mishra ,  Ashok Prabhu ,  Tomoko Noguchi ,  Luu Thanh Nguyen ,  Anindya Poddar ,  Makoto Yoshino ,  Hau Nguyen

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/495

Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

公开(公告)号：US11450638B2

公开(公告)日：2022-09-20

申请号：US17009648

申请日：2020-09-01

Applicant: Texas Instruments Incorporated

Inventor： Dibyajat Mishra ,  Ashok Prabhu ,  Tomoko Noguchi ,  Luu Thanh Nguyen ,  Anindya Poddar ,  Makoto Yoshino ,  Hau Nguyen

IPC: H01L23/00 ,  H01L23/495 ,  H01L23/31

Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

公开(公告)号：US10763231B2

公开(公告)日：2020-09-01

申请号：US16047888

申请日：2018-07-27

Applicant: Texas Instruments Incorporated

Inventor： Dibyajat Mishra ,  Ashok Prabhu ,  Tomoko Noguchi ,  Luu Thanh Nguyen ,  Anindya Poddar ,  Makoto Yoshino ,  Hau Nguyen

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/495

Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.