公开(公告)号：US11450638B2

公开(公告)日：2022-09-20

申请号：US17009648

申请日：2020-09-01

申请人： Texas Instruments Incorporated

发明人： Dibyajat Mishra ,  Ashok Prabhu ,  Tomoko Noguchi ,  Luu Thanh Nguyen ,  Anindya Poddar ,  Makoto Yoshino ,  Hau Nguyen

IPC分类号： H01L23/00 ,  H01L23/495 ,  H01L23/31

摘要： A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

公开(公告)号：US10763231B2

公开(公告)日：2020-09-01

申请号：US16047888

申请日：2018-07-27

申请人： Texas Instruments Incorporated

发明人： Dibyajat Mishra ,  Ashok Prabhu ,  Tomoko Noguchi ,  Luu Thanh Nguyen ,  Anindya Poddar ,  Makoto Yoshino ,  Hau Nguyen

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495

摘要： A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

公开(公告)号：US20240038691A1

公开(公告)日：2024-02-01

申请号：US17877426

申请日：2022-07-29

申请人： Texas Instruments Incorporated

发明人： Vijaylaxmi Gumaste Khanolkar ,  Anindya Poddar ,  Hassan Omar Ali ,  Dibyajat Mishra ,  Venkatesh Srinivasan ,  Swaminathan Sankaran

IPC分类号： H01L23/66 ,  H01Q1/22 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L23/66 ,  H01Q1/2283 ,  H01L21/565 ,  H01L21/561 ,  H01L24/96 ,  H01L24/97 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L2224/16225 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2223/6688 ,  H01L2924/2027 ,  H01L2924/182

摘要： In a described example, an apparatus includes: a semiconductor device mounted to a device side surface of a package substrate, the package substrate having a board side surface opposite the device side surface; an antenna module mounted to the package substrate and coupled to the semiconductor device; and mold compound covering the semiconductor device and a portion of the package substrate.

公开(公告)号：US20200235067A1

公开(公告)日：2020-07-23

申请号：US16253680

申请日：2019-01-22

申请人： Texas Instruments Incorporated

发明人： Woochan Kim ,  Dibyajat Mishra ,  Kurt Sincerbox ,  Vivek Arora

IPC分类号： H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L25/07 ,  H01L25/00

摘要： A packaged electronic device includes a multilayer substrate, including a first side, a first layer having a first plurality of conductive structures along the first side, and a second layer having a second plurality of conductive structures, a semiconductor die soldered to a first set of the conductive structures, a conductive clip directly connected to one of the conductive structures of the first layer and to a second side of the semiconductor die, and a package structure that encloses the semiconductor die and a portion of the conductive clip.

公开(公告)号：US20200035633A1

公开(公告)日：2020-01-30

申请号：US16047888

申请日：2018-07-27

申请人： Texas Instruments Incorporated

发明人： Dibyajat Mishra ,  Ashok Prabhu ,  Tomoko Noguchi ,  Luu Thanh Nguyen ,  Anindya Poddar ,  Makoto Yoshino ,  Hau Nguyen

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495

摘要： A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.