公开(公告)号：US11021786B2

公开(公告)日：2021-06-01

申请号：US16209513

申请日：2018-12-04

申请人： Texas Instruments Incorporated

发明人： Luu Thanh Nguyen ,  Mahmud Halim Chowdhury ,  Ashok Prabhu ,  Anindya Poddar

IPC分类号： H01L21/3205 ,  C23C14/12 ,  C23F11/10 ,  H01L21/288 ,  H01L21/768

摘要： In a described example, a method for passivating a copper structure includes: passivating a surface of the copper structure with a copper corrosion inhibitor layer; and depositing a protection overcoat layer with a thickness less than 35 μm on a surface of the copper corrosion inhibitor layer.

公开(公告)号：US10763230B2

公开(公告)日：2020-09-01

申请号：US16228962

申请日：2018-12-21

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Hiroyuki Sada ,  Shoichi Iriguchi ,  Genki Yano ,  Luu Thanh Nguyen ,  Ashok Prabhu ,  Anindya Poddar ,  Yi Yan ,  Hau Nguyen

IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L23/00 ,  H01L23/495

摘要： A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

公开(公告)号：US11450638B2

公开(公告)日：2022-09-20

申请号：US17009648

申请日：2020-09-01

申请人： Texas Instruments Incorporated

发明人： Dibyajat Mishra ,  Ashok Prabhu ,  Tomoko Noguchi ,  Luu Thanh Nguyen ,  Anindya Poddar ,  Makoto Yoshino ,  Hau Nguyen

IPC分类号： H01L23/00 ,  H01L23/495 ,  H01L23/31

摘要： A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

公开(公告)号：US10763231B2

公开(公告)日：2020-09-01

申请号：US16047888

申请日：2018-07-27

申请人： Texas Instruments Incorporated

发明人： Dibyajat Mishra ,  Ashok Prabhu ,  Tomoko Noguchi ,  Luu Thanh Nguyen ,  Anindya Poddar ,  Makoto Yoshino ,  Hau Nguyen

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495

摘要： A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

公开(公告)号：US10650957B1

公开(公告)日：2020-05-12

申请号：US16176630

申请日：2018-10-31

申请人： Texas Instruments Incorporated

发明人： Yi Yan ,  Luu Thanh Nguyen ,  Ashok Prabhu ,  Anindya Poddar

IPC分类号： H01F27/26 ,  H01F27/40 ,  H01L23/495 ,  H01L23/00 ,  H01F27/28 ,  H01F41/24 ,  H01L23/66 ,  H01L23/31

摘要： Apparatus to form a transformer, an inductor, a capacitor or other passive electronic component, with patterned conductive features in a lamination structure, and one or more ferrite sheets or other magnetic core structures attached to the lamination structure via one or more inkjet printed magnetic adhesive layers that join the magnetic core structure or structures to the lamination structure.

公开(公告)号：US20240055331A1

公开(公告)日：2024-02-15

申请号：US17887790

申请日：2022-08-15

申请人： Texas Instruments Incorporated

发明人： Hau Nguyen ,  Ashok Prabhu ,  Kurt Sincerbox

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L23/49568 ,  H01L24/73 ,  H01L24/48 ,  H01L24/32 ,  H01L23/49513 ,  H01L23/49565 ,  H01L23/49562 ,  H01L23/3135 ,  H01L21/4842 ,  H01L21/565 ,  H01L21/561 ,  H01L2924/182 ,  H01L2224/73265 ,  H01L2224/48464 ,  H01L2224/48245 ,  H01L2224/32245

摘要： An electronic device includes a die attach pad, a semiconductor die, a lead, a package structure, and tie bars, where the die attach pad has opposite first and second sides, the semiconductor die is attached to the second side of the die attach pad, the lead has a first portion connected to a circuit of the semiconductor die by a bond wire, the package structure exposes a portion of the first side of the die attach pad and the second portion of the lead. Four tie bars extend outward from the die attach pad and the tie bars have respective ends exposed outside the package structure.

公开(公告)号：US11410875B2

公开(公告)日：2022-08-09

申请号：US16225875

申请日：2018-12-19

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Hau Thanh Nguyen ,  Woochan Kim ,  Yi Yan ,  Luu Thanh Nguyen ,  Ashok Prabhu ,  Anindya Poddar ,  Masamitsu Matsuura ,  Kengo Aoya ,  Mutsumi Masumoto

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/31 ,  H01L23/00

摘要： An electronic device (100) includes a substrate (110) and an integrated circuit (120) provided on the substrate (110) having a surface facing away from the substrate (110). An insulating layer (150) extends over the substrate (110) and around the integrated circuit (120) to define an interface (154) between the insulating layer (150) and the integrated circuit (120). An electrically conductive via (130) is provided on the surface of the integrated circuit (120). An insulating material (140) extends over the via (130) and includes an opening (142) exposing a portion of the via (130). A repassivation member (162) extends over the insulating layer (150) and has a surface (164) aligned with the interface (154). An electrically conductive redistribution member (181) is electrically connected to the via (130) and extends over the repassivation member (162) into contact with the insulating layer (150).

公开(公告)号：US20200173013A1

公开(公告)日：2020-06-04

申请号：US16209513

申请日：2018-12-04

申请人： Texas Instruments Incorporated

发明人： Luu Thanh Nguyen ,  Mahmud Halim Chowdhury ,  Ashok Prabhu ,  Anindya Poddar

IPC分类号： C23C14/12 ,  C23F11/10 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/288

摘要： In a described example, a method for passivating a copper structure includes: passivating a surface of the copper structure with a copper corrosion inhibitor layer; and depositing a protection overcoat layer with a thickness less than 35 μm on a surface of the copper corrosion inhibitor layer.

公开(公告)号：US20200035633A1

公开(公告)日：2020-01-30

申请号：US16047888

申请日：2018-07-27

申请人： Texas Instruments Incorporated

发明人： Dibyajat Mishra ,  Ashok Prabhu ,  Tomoko Noguchi ,  Luu Thanh Nguyen ,  Anindya Poddar ,  Makoto Yoshino ,  Hau Nguyen

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495

摘要： A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

公开(公告)号：US11367699B2

公开(公告)日：2022-06-21

申请号：US17009664

申请日：2020-09-01

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Hiroyuki Sada ,  Shoichi Iriguchi ,  Genki Yano ,  Luu Thanh Nguyen ,  Ashok Prabhu ,  Anindya Poddar ,  Yi Yan ,  Hau Nguyen

IPC分类号： H01L23/00 ,  H01L21/78 ,  H01L21/683 ,  H01L23/495

摘要： A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.