Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16103721Application Date: 2018-08-14
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Publication No.: US10763255B2Publication Date: 2020-09-01
- Inventor: Kuo-Cheng Ching , Shi-Ning Ju , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/08 ; H01L21/8234 ; H01L21/762 ; H01L21/311 ; H01L29/66 ; H01L29/78 ; H01L27/02 ; H01L29/165 ; H01L21/033 ; H01L21/02 ; H01L21/027 ; H01L21/3105 ; H01L21/3213 ; H01L29/205
Abstract:
A semiconductor device has a first fin, a second fin, an isolation structure between the first fin and the second fin, a dielectric stage in the isolation structure, and a helmet layer over the dielectric stage. A top surface of the helmet layer is higher than a top surface of the isolation structure.
Public/Granted literature
- US20200058649A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-02-20
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