Invention Grant
- Patent Title: Save-restore circuitry with metal-ferroelectric-metal devices
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Application No.: US16144896Application Date: 2018-09-27
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Publication No.: US10777250B2Publication Date: 2020-09-15
- Inventor: Kaushik Vaidyanathan , Daniel H. Morris , Huichu Liu , Dileep J. Kurian , Uygar E. Avci , Tanay Karnik , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G06F1/3234 ; G11C11/413 ; G11C14/00

Abstract:
Embodiments include apparatuses, methods, and systems associated with save-restore circuitry including metal-ferroelectric-metal (MFM) devices. The save-restore circuitry may be coupled to a bit node and/or bit bar node of a pair of cross-coupled inverters to save the state of the bit node and/or bit bar node when an associated circuit block transitions to a sleep state, and restore the state of the bit node and/or bit bar node when the associated circuit block transitions from the sleep state to an active state. The save-restore circuitry may be used in a flip-flop circuit, a register file circuit, and/or another suitable type of circuit. The save-restore circuitry may include a transmission gate coupled between the bit node (or bit bar node) and an internal node, and an MFM device coupled between the internal node and a plate line. Other embodiments may be described and claimed.
Public/Granted literature
- US20190043549A1 SAVE-RESTORE CIRCUITRY WITH METAL-FERROELECTRIC-METAL DEVICES Public/Granted day:2019-02-07
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