Invention Grant
- Patent Title: Interconnects with non-mandrel cuts formed by early block patterning
-
Application No.: US16033714Application Date: 2018-07-12
-
Publication No.: US10777413B2Publication Date: 2020-09-15
- Inventor: Yuping Ren , Guoxiang Ning , Haigou Huang , Sunil K. Singh
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02 ; H01L21/311 ; H01L21/768

Abstract:
Methods of fabricating an interconnect structure. A hardmask is deposited over a dielectric layer, and a block mask is formed that is arranged over an area on the hardmask. After forming the block mask, a first mandrel and a second mandrel are formed on the hardmask. The first mandrel is laterally spaced from the second mandrel, and the area on the hardmask is arranged between the first mandrel and the second mandrel. The block mask may be used to provide a non-mandrel cut separating the tips of interconnects subsequently formed in the dielectric layer.
Public/Granted literature
- US20200020531A1 INTERCONNECTS WITH NON-MANDREL CUTS FORMED BY EARLY BLOCK PATTERNING Public/Granted day:2020-01-16
Information query
IPC分类: