Invention Grant
- Patent Title: Method and apparatus for determining etch process parameters
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Application No.: US15783301Application Date: 2017-10-13
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Publication No.: US10784174B2Publication Date: 2020-09-22
- Inventor: Yassine Kabouzi , Luc Albarede
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/67 ; H01J37/32 ; G01N21/3504 ; H01L21/3065 ; H01L21/311 ; H01L21/3213
Abstract:
A method for processing a substrate in a processing chamber using at least one time trace based prediction model is provided. A substrate is dry processed, where the dry processing creates at least one gas by-product. A concentration of the at least one gas by-product is measured. A time trace of the concentration of the at least one gas by-product is determined. The determined time trace of the concentration is provided as input for the at least one time trace based prediction model to obtain at least one process output. The at least one process output is used to adjust at least one process parameter.
Public/Granted literature
- US20190115267A1 METHOD AND APPARATUS FOR DETERMINING PROCESS PARAMETERS Public/Granted day:2019-04-18
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