A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The magnetic tunnel junction comprises a free layer, a tunneling barrier layer, and pinned layer. The tunneling barrier layer is disposed on the free layer. The pinned layer is disposed on the tunneling barrier layer. A film plane area of the free layer is greater than a film plane area of the tunneling barrier layer and a film plane area of the pinned layer.