Invention Grant
- Patent Title: Non-volatile memory with capacitors using metal under pads
-
Application No.: US16168168Application Date: 2018-10-23
-
Publication No.: US10789992B2Publication Date: 2020-09-29
- Inventor: Luisa Lin , Mohan Dunga , Venkatesh P. Ramachandra , Peter Rabkin , Masaaki Higashitani
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C5/06 ; H01L27/1157 ; H01L27/11573 ; G11C16/08 ; G11C5/10 ; G11C16/28 ; G11C16/24 ; H01L27/11578

Abstract:
A non-volatile storage apparatus comprises a non-volatile memory structure and a plurality of I/O pads in communication with the non-volatile memory structure. The I/O pads include a power I/O pad, a ground I/O pad and data/control I/O pads. The non-volatile storage apparatus further comprises one or more capacitors connected to the power I/O pad. The one or more capacitors are positioned in one or more metal interconnect layers below the I/O pads.
Public/Granted literature
- US20200013434A1 NON-VOLATILE MEMORY WITH CAPACITORS USING METAL UNDER PADS Public/Granted day:2020-01-09
Information query