Invention Grant
- Patent Title: Temperature compensation in memory sensing
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Application No.: US16111319Application Date: 2018-08-24
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Publication No.: US10790029B2Publication Date: 2020-09-29
- Inventor: Luyen Vu , Kalyan C. Kavalipurau , Jae-Kwan Park , Erwin E. Yu
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/04 ; G11C16/24 ; G11C7/04 ; G11C16/30 ; G11C16/32 ; G11C5/14

Abstract:
Apparatus and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.
Public/Granted literature
- US20180366203A1 TEMPERATURE COMPENSATION IN MEMORY SENSING Public/Granted day:2018-12-20
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