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公开(公告)号:US10790029B2
公开(公告)日:2020-09-29
申请号:US16111319
申请日:2018-08-24
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Luyen Vu , Kalyan C. Kavalipurau , Jae-Kwan Park , Erwin E. Yu
Abstract: Apparatus and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.
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公开(公告)号:US20180366203A1
公开(公告)日:2018-12-20
申请号:US16111319
申请日:2018-08-24
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Luyen Vu , Kalyan C. Kavalipurau , Jae-Kwan Park , Erwin E. Yu
CPC classification number: G11C16/26 , G11C5/145 , G11C7/04 , G11C16/0483 , G11C16/24 , G11C16/30 , G11C16/32
Abstract: Apparatus and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.
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公开(公告)号:US10127988B2
公开(公告)日:2018-11-13
申请号:US15248692
申请日:2016-08-26
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Luyen Vu , Kalyan C. Kavalipurau , Jae-Kwan Park , Erwin E. Yu
Abstract: Sense circuits and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.
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公开(公告)号:US20180061497A1
公开(公告)日:2018-03-01
申请号:US15248692
申请日:2016-08-26
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Luyen Vu , Kalyan C. Kavalipurau , Jae-Kwan Park , Erwin E. Yu
CPC classification number: G11C16/26 , G11C5/145 , G11C7/04 , G11C16/0483 , G11C16/24 , G11C16/30 , G11C16/32
Abstract: Sense circuits and methods to vary, in response to temperature, a precharge voltage level of a sense node during a sense operation, a sense node develop time during the sense operation, and/or a ratio of a deboost voltage level capacitively decoupled from the sense node to a boost voltage level capacitively coupled to the sense node during the sense operation.
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