- 专利标题： Wiring structure and method for manufacturing the same
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申请号： US16289072申请日： 2019-02-28
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公开(公告)号： US10790241B2公开(公告)日： 2020-09-29
- 发明人: Wen Hung Huang , Yan Wen Chung , Huei-Shyong Cho
- 申请人： Advanced Semiconductor Engineering, Inc.
- 申请人地址： TW Kaohsiung
- 专利权人： ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- 当前专利权人： ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- 当前专利权人地址： TW Kaohsiung
- 代理机构： Foley & Lardner LLP
- 主分类号： H05K1/11
- IPC分类号： H05K1/11 ; H05K3/42 ; H01L23/00 ; H01L23/498 ; H01L23/552 ; H01L21/48 ; H01L21/66 ; H01L21/683 ; H01L23/66 ; H01L25/16
摘要：
A wiring structure includes a conductive structure, a surface structure and at least one through via. The conductive structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The surface structure is disposed adjacent to a top surface of the conductive structure. The through via extends through the surface structure and extending into at least a portion of the conductive structure.
公开/授权文献
- US20200279815A1 WIRING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 公开/授权日：2020-09-03
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