Invention Grant
- Patent Title: Wiring structure and method for manufacturing the same
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Application No.: US16289072Application Date: 2019-02-28
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Publication No.: US10790241B2Publication Date: 2020-09-29
- Inventor: Wen Hung Huang , Yan Wen Chung , Huei-Shyong Cho
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K3/42 ; H01L23/00 ; H01L23/498 ; H01L23/552 ; H01L21/48 ; H01L21/66 ; H01L21/683 ; H01L23/66 ; H01L25/16
Abstract:
A wiring structure includes a conductive structure, a surface structure and at least one through via. The conductive structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The surface structure is disposed adjacent to a top surface of the conductive structure. The through via extends through the surface structure and extending into at least a portion of the conductive structure.
Public/Granted literature
- US20200279815A1 WIRING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2020-09-03
Information query
