Invention Grant
- Patent Title: Integrated assemblies comprising ferroelectric transistors and non-ferroelectric transistors
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Application No.: US16046803Application Date: 2018-07-26
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Publication No.: US10790304B2Publication Date: 2020-09-29
- Inventor: Wayne I. Kinney
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/11597 ; H01L27/11592 ; H01L23/528 ; H01L27/1159 ; G11C11/22 ; H01L29/78 ; H01L29/10 ; H01L29/08 ; H01L29/66 ; H01L29/423 ; H01L27/1157 ; H01L27/11514 ; H01L27/11582
Abstract:
Some embodiments include an integrated assembly having a semiconductor structure extending from a first wiring to a second wiring. A ferroelectric transistor includes a first transistor gate adjacent a first region of the semiconductor structure. A first non-ferroelectric transistor includes a second transistor gate adjacent a second region of the semiconductor structure. The second region of the semiconductor structure is between the first region of the semiconductor structure and the first wiring. A second non-ferroelectric transistor includes a third transistor gate adjacent a third region of the semiconductor structure. The third region of the semiconductor structure is between the first region of the semiconductor structure and the second wiring.
Public/Granted literature
- US20200035704A1 Integrated Assemblies Comprising Ferroelectric Transistors and Non-Ferroelectric Transistors Public/Granted day:2020-01-30
Information query
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