- 专利标题： Integrated assemblies comprising ferroelectric transistors and non-ferroelectric transistors
-
申请号： US16046803申请日： 2018-07-26
-
公开(公告)号： US10790304B2公开(公告)日： 2020-09-29
- 发明人: Wayne I. Kinney
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L27/11597 ; H01L27/11592 ; H01L23/528 ; H01L27/1159 ; G11C11/22 ; H01L29/78 ; H01L29/10 ; H01L29/08 ; H01L29/66 ; H01L29/423 ; H01L27/1157 ; H01L27/11514 ; H01L27/11582
摘要：
Some embodiments include an integrated assembly having a semiconductor structure extending from a first wiring to a second wiring. A ferroelectric transistor includes a first transistor gate adjacent a first region of the semiconductor structure. A first non-ferroelectric transistor includes a second transistor gate adjacent a second region of the semiconductor structure. The second region of the semiconductor structure is between the first region of the semiconductor structure and the first wiring. A second non-ferroelectric transistor includes a third transistor gate adjacent a third region of the semiconductor structure. The third region of the semiconductor structure is between the first region of the semiconductor structure and the second wiring.
公开/授权文献
信息查询
IPC分类:
