Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US16036434Application Date: 2018-07-16
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Publication No.: US10790388B2Publication Date: 2020-09-29
- Inventor: Makoto Koshimizu , Komaki Inoue , Hideki Niwayama
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3291aad3
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L29/66 ; H01L29/06 ; H01L27/02 ; H01L29/08 ; H01L29/10 ; H01L29/423 ; H01L21/266 ; H01L29/36 ; H01L21/265 ; H01L27/088 ; H01L21/8234 ; H01L21/02 ; H01L21/027 ; H01L21/311 ; H01L21/324 ; H01L29/49 ; H01L21/28 ; H01L21/285
Abstract:
A semiconductor device with improved performance. A channel region and a well region having a lower impurity concentration than the channel region are formed in a semiconductor substrate on the source region side of an LDMOS. The channel region partially overlaps a gate electrode in plan view. In the gate length direction of the LDMOS, an end of the well region in the channel region is at a distance from the end of the gate electrode on the source region side of the LDMOS in a manner to be away from the gate electrode.
Public/Granted literature
- US20190067472A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-02-28
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