Invention Grant
- Patent Title: Semiconductor device having a light emitting structure
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Application No.: US16068600Application Date: 2016-12-28
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Publication No.: US10790413B2Publication Date: 2020-09-29
- Inventor: Youn Joon Sung , Yong Gyeong Lee , Kwang Yong Choi
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Ked & Associates LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1e49d18c
- International Application: PCT/KR2016/015364 WO 20161228
- International Announcement: WO2017/119661 WO 20170713
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/32 ; H01L33/20 ; H01L33/36 ; H01L33/58 ; G02F1/13357 ; H01L33/44

Abstract:
One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.26, wherein the first length is a length in a first direction between the first edge and the second edge, and the second length is a length in a second direction between the first edge and the second edge, wherein the first direction and the second direction are directions that are perpendicular to each other.
Public/Granted literature
- US20190013439A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-01-10
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